Neon Ion Beam Lithography (NIBL)
Nano Letters2011Vol. 11(10), pp. 4343–4347
Citations Over TimeTop 10% of 2011 papers
Donny Winston, Vitor R. Manfrinato, Samuel M. Nicaise, Lin Lee Cheong, Huigao Duan, David C. Ferranti, Jeff Marshman, Shawn McVey, Lewis Stern, John Notte, Karl K. Berggren
Abstract
Existing techniques for electron- and ion-beam lithography, routinely employed for nanoscale device fabrication and mask/mold prototyping, do not simultaneously achieve efficient (low fluence) exposure and high resolution. We report lithography using neon ions with fluence <1 ion/nm(2), ∼1000× more efficient than using 30 keV electrons, and resolution down to 7 nm half-pitch. This combination of resolution and exposure efficiency is expected to impact a wide array of fields that are dependent on beam-based lithography.
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