Graphene for True Ohmic Contact at Metal–Semiconductor Junctions
Nano Letters2013Vol. 13(9), pp. 4001–4005
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Kyung‐Eun Byun, Hyun‐Jong Chung, Jaeho Lee, Heejun Yang, Hyun Jae Song, Jinseong Heo, David H. Seo, Seong-Jun Park, Sung Woo Hwang, In-Kyeong Yoo, Kinam Kim
Abstract
The rectifying Schottky characteristics of the metal-semiconductor junction with high contact resistance have been a serious issue in modern electronic devices. Herein, we demonstrated the conversion of the Schottky nature of the Ni-Si junction, one of the most commonly used metal-semiconductor junctions, into an Ohmic contact with low contact resistance by inserting a single layer of graphene. The contact resistance achieved from the junction incorporating graphene was about 10(-8) ~ 10(-9) Ω cm(2) at a Si doping concentration of 10(17) cm(-3).
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