Jinseong Heo
Samsung (South Korea)(KR)Samsung Advanced Institute of Technology (South Korea)Stanford University(US)
Publications by Year
Research Areas
Graphene research and applications, Ferroelectric and Negative Capacitance Devices, Semiconductor materials and devices, Advanced Memory and Neural Computing, 2D Materials and Applications
Most-Cited Works
- → Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier(2012)944 cited
- → Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio(2016)355 cited
- → Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors(2022)326 cited
- → Tuning Carrier Tunneling in van der Waals Heterostructures for Ultrahigh Detectivity(2016)234 cited
- → Highly enhanced ferroelectricity in HfO 2 -based ferroelectric thin film by light ion bombardment(2022)177 cited
- → Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics(2022)164 cited
- → Robust bi-stable memory operation in single-layer graphene ferroelectric memory