Direct Low-Temperature Nanographene CVD Synthesis over a Dielectric Insulator
ACS Nano2010Vol. 4(7), pp. 4206–4210
Citations Over TimeTop 1% of 2010 papers
Rafael G. Mendes, Alicja Bachmatiuk, A.J. Scott, Felix Börrnert, Jamie H. Warner, V. Hoffman, Jarrn‐Horng Lin, Gianaurelio Cuniberti, B. Büchner
Abstract
Graphene ranks highly as a possible material for future high-speed and flexible electronics. Current fabrication routes, which rely on metal substrates, require post-synthesis transfer of the graphene onto a Si wafer, or in the case of epitaxial growth on SiC, temperatures above 1000 degrees C are required. Both the handling difficulty and high temperatures are not best suited to present day silicon technology. We report a facile chemical vapor deposition approach in which nanographene and few-layer nanographene are directly formed over magnesium oxide and can be achieved at temperatures as low as 325 degrees C.
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