Light emitting diodes based on GaN core/shell wires grown by MOVPE on n-type Si substrate

Citations Over TimeTop 10% of 2011 papers

Abstract

A report is presented on the fabrication of light emitting diodes (LEDs) based on GaN core/shell wires on conductive substrates by metal organic vapour phase epitaxy. Catalyst-free GaN-based wires are grown spontaneously on 2-inch n-doped silicon substrates without any thick buffer layer. The LED wire heterostructure consists of an n-type GaN:Si core covered radially by five InGaN/GaN quantum wells and a p-type GaN:Mg shell. Macroscopic devices that integrate around 106 wire-LEDs have been obtained thanks to a simple, direct and full-wafer scale contacting process. For the first time, continuous-wave electrical injection at room temperature through the Si substrate into a cm2-chip of GaN-based core/shell wire-LEDs is successfully demonstrated, producing blue electroluminescent emission at 450 nm.

Related Papers

• → ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique(2007)130 cited
• → Comparison of GaN and In0.04Ga0.96N p-Layers on the Electrical and Electroluminescence Properties of Green Light Emitting Diodes(2007)19 cited
• → Electroluminescence in Si/SiO2 layer structures(2001)38 cited
• → Длинноволновые светодиоды в окне прозрачности атмосферы 4.6-5.3 мкм(2020)1 cited
• → MOCVD‐Grown InGaN/GaN MQW LEDs on Si(111)(2002)4 cited