Simple model for space-charge region capacitance of an exponential-constant p–n junction

Abstract

Depletion layer properties have been calculated for an exponential-constant p–n junction in silicon by using a simple model. Closed-form expressions are presented for the built-in voltage Vbi and the offset voltage correction ΔV, respectively, for this junction. These formulas allow the depletion capacitance to be accurately determined from a given value of applied voltage Va by manual calculations. The results obtained here can readily be extended to other semiconductor materials and other diffused p–n junctions.

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