Low threshold current density 1.3 µm metamorphic InGaAs/GaAs quantum well laser diodes
Electronics Letters2008Vol. 44(7), pp. 474–475
Citations Over TimeTop 12% of 2008 papers
Donghai Wu, Hao Wang, Bian Wu, H. Q. Ni, Siyi Huang, Yan Xiong, P. Wang, Q. Han, Zhichuan Niu, Ivar Tångring, S.M. Wang
Abstract
Very low threshold current density InGaAs/GaAs quantum well laser diodes grown by molecular beam epitaxy on InGaAs metamorphic buffers are reported. The lasing wavelength of the ridge waveguide laser diode with cavity length of 1200 µm is centred at 1337.2 nm; the threshold current density is 205 A/cm2 at room temperature under continuous-wave operation.
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