Q. Han
Rolls-Royce (United Kingdom)(GB)
Publications by Year
Research Areas
Semiconductor Quantum Structures and Devices, Photonic and Optical Devices, Semiconductor Lasers and Optical Devices, Advanced Semiconductor Detectors and Materials, GaN-based semiconductor devices and materials
Most-Cited Works
- → GaAs-based room-temperature continuous-wave 1.59μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy(2005)35 cited
- → Low threshold current density 1.3 µm metamorphic InGaAs/GaAs quantum well laser diodes(2008)33 cited
- → 1.55 μ m GaInNAs resonant-cavity-enhanced photodetector grown on GaAs(2005)25 cited
- → High-indium-content InxGa1−xAs/GaAs quantum wells with emission wavelengths above 1.25 μm at room temperature(2004)23 cited
- → Mode Selectivity in Bragg Reflection Waveguide Lasers(2011)11 cited
- → The x-ray facilities in-building for calibrations of HXMT(2014)11 cited
- → Post-growth and in situ annealing on GaInNAs(Sb) and their application in 1.55 µm lasers(2006)10 cited
- → Characteristic of rapid thermal annealing on GaIn(N)(Sb)As∕GaAs quantum well grown by molecular-beam epitaxy(2006)9 cited
- → Preliminary development of a dust explosion equipment for time-resolved SAXS experiment with synchrotron radiation(2024)8 cited
- → High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate(2011)7 cited