Wafer‐fused 1300 nm VCSELs with an active region based on superlattice
Electronics Letters2021Vol. 57(18), pp. 697–698
Citations Over TimeTop 11% of 2021 papers
S. A. Blokhin, A. V. Babichev, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, A. A. Blokhin, S. S. Rochas, Dmitrii V. Denisov, K. O. Voropaev, А. С. Ионов, N. N. Ledentsov, A. Yu. Egorov
Abstract
Abstract The 1300 nm range vertical‐cavity surface‐emitting lasers with the active region based on InGaAs/InGaAlAs superlattice are fabricated using molecular‐beam epitaxy and the double wafer‐fusion technique. Lasers with the buried tunnel junction diameter of 5 μm have shown single‐mode CW operation with the output optical power of ∼6 mW at 20°C. Opened eye diagrams are observed up to 10 Gbps.
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