Internal emission metal-semiconductor-metal photodetectors on Si and GaAs for 1.3 μm detection

Citations Over Time

Abstract

Si and GaAs metal-semiconductor-metal photodetectors with finger spacing as small as 0.25 μm are studied for 1.3 μm wavelength operation. It was found that the detectors have an external quantum efficiency as high as 0.5% for 1.3 μm light and a low dark current at room temperature. Increasing the Schottky barrier height reduces the responsivity of the detectors, but reduces the dark current more significantly and increases the responsivity-to-dark-current ratio. The condition for maximum signal-to-noise ratio was derived. Finally, the dependence of the detector’s responsivity on the finger spacing was studied. Both the field-enhanced injection and charge-carrier screening were found to significantly affect the detector’s responsivity.

Related Papers

• → Low dark current quantum-dot infrared photodetectors with an AlGaAs current blocking layer(2001)111 cited
• → High responsivity, low dark current, heterogeneously integrated thin film Si photodetectors on rigid and flexible substrates(2014)20 cited
• → Investigation of InAs/GaAs quantum-dot infrared photodetector with In _0.5 Ga _0.5 P dark current blocking layer(2002)9 cited
• → Internal emission metal-semiconductor-metal photodetectors on Si and GaAs for 1.3 μm detection(1995)20 cited
• → Performance optimization of long-wave infrared detectors based on InAs/GaSb strained layer superlattices(2011)3 cited