Decrease in the leakage current density of Si-based metal–oxide–semiconductor diodes by cyanide treatment
Applied Physics Letters2002Vol. 80(24), pp. 4552–4554
Citations Over TimeTop 10% of 2002 papers
Abstract
Crown-ether cyanide treatment, which includes the immersion of Si in KCN solutions containing 18-crown-6 molecules, is found to greatly decrease the leakage current density of Si-based metal–oxide–semiconductor (MOS) diodes. The decrease by one order of magnitude for the single crystalline Si-based MOS diodes is attributable to the elimination of Si/SiO2 interface states by reaction with cyanide ions and formation of Si–CN bonds. The reduction in the leakage current density by two orders of magnitude is caused for polycrystalline Si-based MOS diodes, and this decrease is attributed to the passivation of trap states in poly-Si as well as the interface states.
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