Yoshihiro Todokoro
Kyoto Seika University(JP)
Publications by Year
Research Areas
Advancements in Photolithography Techniques, Semiconductor materials and devices, Integrated Circuits and Semiconductor Failure Analysis, Electron and X-Ray Spectroscopy Techniques, Semiconductor materials and interfaces
Most-Cited Works
- → Ultrathin silicon dioxide layers with a low leakage current density formed by chemical oxidation of Si(2002)104 cited
- → Studies on interface states at ultrathin SiO2/Si(100) interfaces by means of x-ray photoelectron spectroscopy under biases and their passivation by cyanide treatment(1998)57 cited
- → Decrease in gap states at ultrathin SiO2/Si interfaces by crown-ether cyanide treatment(2000)40 cited
- → Mechanism of platinum-enhanced oxidation of silicon at low temperatures(1998)39 cited
- → Decrease in the leakage current density of Si-based metal–oxide–semiconductor diodes by cyanide treatment(2002)38 cited
- → Low temperature catalytic formation of Si-based metal–oxide–semiconductor structure(1996)33 cited
- → Experimental and Theoretical Study of the Charge Build-Up in an ECR Etcher(1990)26 cited
- → Charge Buildup in Magnetized Process Plasma(1991)23 cited
- → Mechanism of low temperature nitridation of silicon oxide layers by nitrogen plasma generated by low energy electron impact(1999)20 cited
- → The stress-enhanced diffusion of boron in silicon(1978)15 cited