Band alignment of InN∕GaAs heterojunction determined by x-ray photoelectron spectroscopy
Applied Physics Letters2008Vol. 93(12)
Citations Over TimeTop 14% of 2008 papers
Riqing Zhang, Yan Guo, Song Huaping, Xianglin Liu, Shaoyan Yang, Hongyuan Wei, Qinsheng Zhu, Zhanguo Wang
Abstract
The valence band offset (VBO) of the InN∕GaAs heterojunction is directly determined by x-ray photoelectron spectroscopy to be 0.94±0.23eV. The conduction band offset is deduced from the known VBO value to be 1.66±0.23eV, and a type-II band alignment forms at the InN∕GaAs heterojunction.
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