Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy
Applied Physics Letters2008Vol. 93(24)
Citations Over TimeTop 24% of 2008 papers
B. L. Zhang, G. S. Sun, Yang Guo, P. F. Zhang, R. Q. Zhang, Haibo Fan, Xinyu Liu, Song Yang, Qin‐Feng Zhu, Zehan Wang
Abstract
The valence band offset (VBO) of InN/4H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 0.55±0.23 eV and the conduction band offset is deduced to be −2.01±0.23 eV, indicating that the heterojunction has a type-I band alignment. The accurate determination of the valence and conduction band offsets is important for applications of InN/SiC optoelectronic devices.
Related Papers
- → Band offset variations at Ge/GaAs (100) interfaces(1993)23 cited
- → Band alignment of InN/6H-SiC heterojunction determined by x-ray photoelectron spectroscopy(2014)11 cited
- → Band alignment of InN∕GaAs heterojunction determined by x-ray photoelectron spectroscopy(2008)14 cited
- → Electrical Properties of p- and n-GaSe Doped with As and Ge(2000)11 cited
- → Influence of interfacial reactivity on band offsets in ZnSe/GaAs superlattices(2004)1 cited