Band-like transport in high mobility unencapsulated single-layer MoS2 transistors

Citations Over TimeTop 1% of 2013 papers

Abstract

Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hopping model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature.

Related Papers

• → Enhanced electron mobility at the two-dimensional metallic surface of BaSnO3 electric-double-layer transistor at low temperatures(2017)30 cited
• → Low electron mobility of field-effect transistor determined by modulated magnetoresistance(2007)12 cited
• → One-dimensional transport in quantum well wire-high electron mobility transistor(1986)27 cited
• → Growth parameter optimization and interface treatment for enhanced electron mobility in heavily strained GaInAs/AlInAs high electron mobility transistor structures(2014)2 cited
• → Transport properties of closely separated two-dimensional electron gases in a channel-doped back gated high electron mobility transistor(1992)9 cited