One-dimensional transport in quantum well wire-high electron mobility transistor
Applied Physics Letters1986Vol. 49(25), pp. 1738–1740
Citations Over TimeTop 10% of 1986 papers
Abstract
A novel one-dimensional electron gas field-effect transistor (FET) is proposed with the advantages of higher electron mobility and higher carrier concentration than conventional two-dimensional electron gas FET. The FET structure, device operation, and the low-field mobility of impurity scattering, which takes the screening effect into account, are discussed.
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