High-efficiency electrodeposited cadmium telluride solar cells
Applied Physics Letters1982Vol. 40(4), pp. 327–328
Citations Over TimeTop 10% of 1982 papers
Abstract
We report on the development of a low-cost, thin-film electrodeposited cadmium telluride solar cell. The most efficient cell developed to date had an efficiency of 8.6% (under AM1 illumination), an open circuit voltage of 0.723 V, a short circuit current density of 18.7 mA/cm2, and a fill factor of 0.64. The cell uses a Schottky barrier rectifying junction at the front surface and a cadmium ohmic contact at the back. Passivation of the top surface improves the photovoltaic properties of the rectifying junction.
Related Papers
- → Schottky or Ohmic Metal–Semiconductor Contact: Influence on Photocatalytic Efficiency of Ag/ZnO and Pt/ZnO Model Systems(2013)138 cited
- → Graphene for True Ohmic Contact at Metal–Semiconductor Junctions(2013)117 cited
- → Electric Field Induced Schottky to Ohmic Contact Transition in Fe3GeTe2/TMDs Contacts(2023)15 cited
- → Silicon carbide Schottky and ohmic contact process dependence(2002)14 cited
- → Ohmic contacts to moderately doped semiconductors—are they really Ohmic or low-barrier Schottky contacts?(2005)9 cited