Growth and characterization of high yield, reliable, high-power, high-speed, InP/InGaAsP capped mesa buried heterostructure distributed feedback (CMBH-DFB) lasers
IEEE Journal of Quantum Electronics1989Vol. 25(10), pp. 2091–2095
Citations Over TimeTop 10% of 1989 papers
J. L. Zilko, L.J.P. Ketelsen, Y. Twu, D. P. Wilt, S.G. Napoltz, J. Blaha, K. E. Strege, V. G. Riggs, D.L. Van Haren, Suet Yi Leung, P.M. Nitzche, J. Long, C. B. Roxlo, G. Przyblek, J. Lopata, M. W. Focht, J. Koszi
Abstract
The capped-mesa buried-heterostructure distributed-feedback (CMBH-DFB) laser structure requires three epitaxial growths and is designed to allow good control of the width of the active layer using straightforward chemical etching techniques. The base structure, which contains the active layer, was fabricated using a variety of epitaxial techniques: liquid-phase epitaxy, hydride vapor-phase epitaxy (VPE) and metalorganic vapor-phase epitaxy (MOVPE). The final cap growth was done using hydride VPE. High yields of low-threshold high-power DFB lasers were produced from a number of wafers at emission wavelengths of 1.3 and 1.55 mu m.>
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