K. E. Strege
AT&T (United States)(US)Nokia (United States)(US)
Publications by Year
Research Areas
Semiconductor Quantum Structures and Devices, Photonic and Optical Devices, Semiconductor Lasers and Optical Devices, Liquid Crystal Research Advancements, Semiconductor materials and devices
Most-Cited Works
- → Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor-phase epitaxy(1985)175 cited
- → Surface layer spinodal decomposition in In1−xGaxAsyP1−y and In1−xGaxAs grown by hydride transport vapor-phase epitaxy(1985)97 cited
- → Refractive index data from Ga x In 1− x As y P 1− y films(1981)81 cited
- → Growth and characterization of high yield, reliable, high-power, high-speed, InP/InGaAsP capped mesa buried heterostructure distributed feedback (CMBH-DFB) lasers(1989)51 cited
- → X-ray double-crystal characterization of highly perfect InGaAs/InP grown by vapor-phase epitaxy(1986)49 cited
- → Maskless laser interferometric monitoring of InP/InGaAsP heterostructure reactive ion etching(1990)33 cited
- → Channelled-substrate buried heterostructure InGaAsP/InP lasers with vapor phase epitaxial base structure and liquid phase epitaxial regrowth(1984)29 cited
- → Nondestructive measurement of layer thicknesses in double heterostructures by x-ray diffraction(1988)27 cited
- → High-speed distributed feedback lasers grown by hydride epitaxy(1988)24 cited
- → Defect structure in III-V compound semiconductors: Generation and evolution of defect structures in InGaAs and InGaAsP epitaxial layer grown by hydride transport vapor-phase epitaxy(1986)20 cited