Total Ionizing Dose Versus Displacement Damage Dose Induced Dark Current Random Telegraph Signals in CMOS Image Sensors
IEEE Transactions on Nuclear Science2011Vol. 58(6), pp. 3085–3094
Citations Over TimeTop 10% of 2011 papers
Cédric Virmontois, Vincent Goiffon, Pierre Magnan, Olivier Saint-Pé, Sylvain Girard, Sophie Petit, G. Rolland, A. Bardoux
Abstract
Dark current Random Telegraph Signals due to total ionizing dose (TID) and displacement damage dose (DDD) are investigated in CMOS image sensors. Discrepancies between both RTS are emphasised to better understand the microscopic origins of the phenomena.
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