Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors
IEEE Transactions on Nuclear Science2012Vol. 59(6), pp. 2872–2877
Citations Over TimeTop 15% of 2012 papers
Abstract
This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sensors (CIS) using proton and neutron irradiations. The DDD ranges from 12 TeV/g to 1.2×10 6 TeV/g. Particle fluence up to 5×10 14 n.cm -2 is investigated to observe electro-optic degradation in harsh environments. The dark current is also investigated and it would appear that it is possible to use the dark current spectroscopy in PPD CIS. The dark current random telegraph signal is also observed and characterized using the maximum transition amplitude.
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