Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE
Semiconductors2003Vol. 37(9), pp. 1119–1122
Citations Over TimeTop 12% of 2003 papers
A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, Elizaveta Semenova, N. A. Maleev, А. П. Васильев, E. V. Nikitina, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. M. Shernyakov, Yu. G. Musikhin, М. В. Максимов, N. N. Ledentsov, V. M. Ustinov, Zh. I. Alfërov
Abstract
A new method for the epitaxial formation of 1.3-µm injection lasers on GaAs substrates is reported. A metamorphic heterostructure with an In content of about 20% is deposited onto an intermediate buffer layer intended for mismatch strain relaxation. The laser active region is formed by quantum wells with a higher In content (about 40%). Lasers with 100-µm-wide stripes demonstrate room-temperature lasing at 1.29 µm with a minimum threshold current density of 3.3 kA cm2 (0.4 kA cm2 at T=85 K).
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