E. V. Nikitina
Ioffe Institute(RU)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Semiconductor Quantum Structures and Devices, Ga2O3 and related materials, Semiconductor materials and devices, Semiconductor Lasers and Optical Devices
Most-Cited Works
- → Metamorphic growth for application in long-wavelength (1.3–1.55 µm) lasers and MODFET-type structures on GaAs substrates(2004)41 cited
- → Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE(2003)32 cited
- → High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates(2004)29 cited
- → Super-radiant mode in InAs—monolayer–based Bragg structures(2015)26 cited
- → Study of GaP/Si Heterojunction Solar Cells(2016)25 cited
- → Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm(2016)25 cited
- → MBE growth of GaP on a Si substrate(2015)24 cited
- → Lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-μm under current pumping(2015)21 cited
- → Si doped GaP layers grown on Si wafers by low temperature PE-ALD(2018)20 cited
- → Resonance reflection of light by a periodic system of excitons in GaAs/AlGaAs quantum wells(2012)20 cited