Enhanced Nucleation Behavior of Atomic-Layer-Deposited Ru Film on Low-k Dielectrics Afforded by UV-O[sub 3] Treatment

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Abstract

The effect of treatment on the nucleation behavior of ruthenium (Ru) film on low- dielectrics was investigated. A continuous Ru film was not formed on the as-deposited or -annealed low- layer, but after the treatment, full coverage with a continuous Ru layer was obtained. The microstructure and Ru/low- interface were studied using transmission electron microscopy, specular X-ray reflectivity, and Auger electron spectroscopy. The enhanced nucleation behavior of Ru may be due to the increased chemisorption probability of the Ru precursor on the low- film surface, which comes from a modified oxygen-based dense layer .

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