Ultralow-power LSI Technology with Silicon on Thin Buried Oxide (SOTB) CMOSFET
InTech eBooks2010
Citations Over TimeTop 11% of 2010 papers
Abstract
Recently, the scalability of CMOSFETs has become a topic of utmost importance. In SOTB technology, scalability can be pursued by reducing the SOI and BOX thicknesses. The minimum SOI thickness is considered to be 6 nm, after which the influence of the quantum effect or mobility degradation appears (Uchida et al., 2001). Given this value and
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