Norleakvisoth Lim
University of California, Santa Barbara(US)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Semiconductor Quantum Structures and Devices, Metal and Thin Film Mechanics, ZnO doping and properties, Semiconductor materials and devices
Most-Cited Works
- → Demonstration of relaxed InGaN-based red LEDs grown with high active region temperature(2021)49 cited
- → Significant Quantum Efficiency Enhancement of InGaN Red Micro-Light-Emitting Diodes with a Peak External Quantum Efficiency of up to 6%(2023)44 cited
- → Demonstration of III-Nitride Red LEDs on Si Substrates via Strain-Relaxed Template by InGaN Decomposition Layer(2022)14 cited
- → Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer(2022)13 cited
- → Structural, Optical, and Electrical Characterization of 643 nm Red InGaN Multiquantum Wells Grown on Strain‐Relaxed InGaN Templates(2023)12 cited
- → Relationship between ferroelectric polarization and stoichiometry of HfO2 surfaces(2021)11 cited
- → Demonstration of C-Plane InGaN-Based Blue Laser Diodes Grown on a Strain-Relaxed Template(2022)6 cited
- → Impact of Pressure and Hydrogen Dilution on the Kinetics of Methane Decomposition in AC-Excited, High Pressure Plasmas(2023)5 cited
- → AC Plasmas Directly Excited in Liquid-Phase Hydrocarbons for H2 and Unsaturated C2 Hydrocarbon Production(2024)5 cited
- → Effect of thickness and surface composition on the stability of polarization in ferroelectric HfxZr1−xO2 thin films(2023)4 cited