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Shenghuang Lin | doi.page

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Shenghuang Lin

Singapore General Hospital(SG)Duke-NUS Medical School(SG)National Neuroscience Institute(SG)

Publications by Year

Research Areas

2D Materials and Applications, Perovskite Materials and Applications, MXene and MAX Phase Materials, Silicon Carbide Semiconductor Technologies, Graphene research and applications

Most-Cited Works

→ Controlled Synthesis of 2D Palladium Diselenide for Sensitive Photodetector Applications(2018)489 cited
→ Fast, Self‐Driven, Air‐Stable, and Broadband Photodetector Based on Vertically Aligned PtSe₂/GaAs Heterojunction(2018)431 cited
→ Broadband Photodetectors Based on Graphene–Bi₂Te₃ Heterostructure(2015)401 cited
→ Exceptional catalytic effects of black phosphorus quantum dots in shuttling-free lithium sulfur batteries(2018)382 cited
→ Wafer-Scale Synthesis of High-Quality Semiconducting Two-Dimensional Layered InSe with Broadband Photoresponse(2017)336 cited
→ Field‐Effect Transistors Based on Amorphous Black Phosphorus Ultrathin Films by Pulsed Laser Deposition(2015)323 cited

→ Black Phosphorus–Polymer Composites for Pulsed Lasers(2015)

255 cited

→ Ultrafast and sensitive photodetector based on a PtSe2/silicon nanowire array heterojunction with a multiband spectral response from 200 to 1550 nm(2018)247 cited

→ Highly Efficient and Air-Stable Infrared Photodetector Based on 2D Layered Graphene–Black Phosphorus Heterostructure(2017)240 cited

→ Synthesis and Transfer of Large-Area Monolayer WS₂Crystals: Moving Toward the Recyclable Use of Sapphire Substrates(2015)238 cited