A. Hanser
FZI Research Center for Information Technology(DE)Kyma Technologies (United States)(US)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Nuclear physics research studies, Nuclear Physics and Applications, Semiconductor materials and devices, Ga2O3 and related materials
Most-Cited Works
- → Evaluation of a202Pb-205Pb Double Spike for High - Precision Lead Isotope Analysis.*(2011)622 cited
- → High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma(1997)175 cited
- → The odd-even staggering of the nuclear charge radii of Pb isotopes(1986)149 cited
- → Temperature-dependent electrical characteristics of bulk GaN Schottky rectifier(2007)95 cited
- → High-resolution measurements of isotope shifts and hyperfine structure in stable and radioactive lead isotopes(1983)94 cited
- → High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire(2006)82 cited