Temperature-dependent electrical characteristics of bulk GaN Schottky rectifier
Citations Over TimeTop 10% of 2007 papers
Abstract
The temperature-dependent electrical characteristics of Schottky rectifiers fabricated with a SiO2 field plate on a freestanding n− gallium nitride (GaN) substrate were reported in the temperature range of 298–473K. The Schottky barrier heights evaluated from forward current-voltage measurement revealed an increase of Schottky barrier height and series resistance but a decrease of ideality factor (n) with increasing temperature. However, the Schottky barrier heights evaluated from capacitance-voltage measurement remained almost the same throughout the temperature range measured. The Richardson constant extrapolated from ln(J0∕T2) vs 1∕T plot was found to be 0.029Acm−2K−2. A modified Richardson plot with ln(J0∕T2) vs 1∕nT showed better linearity, and the corresponding effective Richardson constant was 35Acm−2K−2. The device showed a high reverse breakdown voltage of 560V at room temperature. The negative temperature coefficients were found for reverse breakdown voltage, which is indicative of a defect-assisted breakdown.
Related Papers
- → A two-diode model regarding the distributed series resistance(2013)61 cited
- → A novel approach for evaluating the series resistance of solar cells(1988)36 cited
- → Determining Series Resistance for Equivalent Circuit Models of a PV Module(2018)31 cited
- → Modelling and simulation of InGaP solar cells under solar concentration: Series resistance measurement and prediction(2006)22 cited
- → Analysis of a capacitive-filter, half-wave rectifier fed by a parallel-load resonant tank(2005)6 cited