Edward A. Preble
RTI International(US)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Ga2O3 and related materials, ZnO doping and properties, Metal and Thin Film Mechanics, Semiconductor materials and devices
Most-Cited Works
- → Accurate dependence of gallium nitride thermal conductivity on dislocation density(2006)216 cited
- → Structural TEM study of nonpolara-plane gallium nitride grown on(112¯0)4H-SiC by organometallic vapor phase epitaxy(2005)204 cited
- → Universal phonon mean free path spectra in crystalline semiconductors at high temperature(2013)158 cited
- → GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition(2006)108 cited
- → High-temperature electromechanical characterization of AlN single crystals(2015)107 cited
- → Temperature-dependent electrical characteristics of bulk GaN Schottky rectifier(2007)95 cited
- → High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire(2006)82 cited
- → Green light emitting diodes on a-plane GaN bulk substrates(2008)75 cited
- → Surface preparation of substrates from bulk GaN crystals(2007)72 cited
- → Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate(2007)72 cited