Pramod Kumar Tiwari
Indian Institute of Technology Patna(IN)
Publications by Year
Research Areas
Advancements in Semiconductor Devices and Circuit Design, Semiconductor materials and devices, Silicon Carbide Semiconductor Technologies, Nanowire Synthesis and Applications, Integrated Circuits and Semiconductor Failure Analysis
Most-Cited Works
- → Simulation Study of Dielectric Modulated Dual Channel Trench Gate TFET-Based Biosensor(2020)120 cited
- → A two-dimensional analytical model for threshold voltage of short-channel triple-material double-gate metal-oxide-semiconductor field-effect transistors(2010)66 cited
- → A two-dimensional model for the potential distribution and threshold voltage of short-channel double-gate metal-oxide-semiconductor field-effect transistors with a vertical Gaussian-like doping profile(2010)64 cited
- → An Analytical Threshold Voltage Model for Triple-Material Cylindrical Gate-All-Around (TM-CGAA) MOSFETs(2013)54 cited
- → A Threshold Voltage Model of Silicon-Nanotube-Based Ultrathin Double Gate-All-Around (DGAA) MOSFETs Incorporating Quantum Confinement Effects(2017)53 cited
- → Low-k interconnect stack with metal-insulator-metal capacitors for 22nm high volume manufacturing(2012)49 cited
- → Subthreshold Modeling of Tri-Gate Junctionless Transistors With Variable Channel Edges and Substrate Bias Effects(2018)35 cited
- → A Threshold Voltage Model of Tri-Gate Junctionless Field-Effect Transistors Including Substrate Bias Effects(2017)32 cited
- → A 2D analytical model of the channel potential and threshold voltage of Double-Gate (DG) MOSFETs with vertical Gaussian doping profile(2009)31 cited
- → An analytical threshold voltage model for a short-channel dual-metal-gate (DMG) recessed-source/drain (Re-S/D) SOI MOSFET(2013)28 cited