Seung‐Eon Ahn
Samsung (South Korea)(KR)Korea University of Technology and Education(KR)Korea Institute for Animal Products Quality Evaluation(KR)
Publications by Year
Research Areas
Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices, Transition Metal Oxide Nanomaterials, Semiconductor materials and devices, Thin-Film Transistor Technologies
Most-Cited Works
- → Electrical observations of filamentary conductions for the resistive memory switching in NiO films(2006)529 cited
- → Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory(2007)434 cited
- → Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory(2009)412 cited
- → A Low‐Temperature‐Grown Oxide Diode as a New Switch Element for High‐Density, Nonvolatile Memories(2006)233 cited
- → 2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications(2007)221 cited
- → Low‐Temperature‐Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High‐Density Non‐volatile Memory(2008)218 cited