A Low‐Temperature‐Grown Oxide Diode as a New Switch Element for High‐Density, Nonvolatile Memories
Advanced Materials2006Vol. 19(1), pp. 73–76
Citations Over TimeTop 1% of 2006 papers
Myoung‐Jae Lee, Sunae Seo, D.‐C. Kim, Seung‐Eon Ahn, David H. Seo, I.‐K. Yoo, In-Hwan Baek, Dong‐Sang Kim, Ik-Su Byun, Seung‐Hyun Kim, I. R. Hwang, Jong Sung Kim, Seung-Min Jeon, Bae Ho Park
Abstract
A one-diode/one-resistor structure, Pt/NiO/Pt/p-NiOx/n-TiOx/Pt, has been fabricated. This novel structure exhibits bistable resistance switching under forward bias, while the diode suppresses resistance switching in the Pt/NiO/Pt memory cell under reverse bias (see figure). Its low processing temperature and small cell size, as well as excellent rectifying characteristics, make this Pt/p-NiOx/n-TiOx/Pt diode structure a promising switch element for high- density, nonvolatile memory devices with 3D stack and cross-point structures.
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