Seung‐Geol Nam
Samsung (South Korea)(KR)
Publications by Year
Research Areas
Ferroelectric and Negative Capacitance Devices, Semiconductor materials and devices, Graphene research and applications, Advanced Memory and Neural Computing, Quantum and electron transport phenomena
Most-Cited Works
- → Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides(2017)919 cited
- → Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors(2022)326 cited
- → Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics(2022)164 cited
- → Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls(2021)100 cited
- → Breakdown of the Interlayer Coherence in Twisted Bilayer Graphene(2013)99 cited
- → Negative differential capacitance in ultrathin ferroelectric hafnia(2023)58 cited
- → Comprehensive Design Guidelines of Gate Stack for QLC and Highly Reliable Ferroelectric VNAND(2023)49 cited
- → Reconfigurable van der Waals Heterostructured Devices with Metal–Insulator Transition(2016)42 cited
- → Potential role of motion for enhancing maximum output energy of triboelectric nanogenerator(2017)37 cited
- → Thermoelectric Detection of Chiral Heat Transport in Graphene in the Quantum Hall Regime(2013)32 cited