Haldun Küflüoğlu
Qualcomm (United States)(US)
Publications by Year
Research Areas
Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Integrated Circuits and Semiconductor Failure Analysis, Ferroelectric and Negative Capacitance Devices, Silicon Carbide Semiconductor Technologies
Most-Cited Works
- → A comprehensive model for PMOS NBTI degradation: Recent progress(2006)292 cited
- → Impact of NBTI on the temporal performance degradation of digital circuits(2005)285 cited
- → Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation(2007)260 cited
- → Impact of Negative-Bias Temperature Instability in Nanoscale SRAM Array: Modeling and Analysis(2007)161 cited
- → Temporal Performance Degradation under NBTI: Estimation and Design for Improved Reliability of Nanoscale Circuits(2006)156 cited
- → Theory of interface-trap-induced NBTI degradation for reduced cross section MOSFETs(2006)93 cited
- → A geometrical unification of the theories of NBTI and HCI time-exponents and its implications for ultra-scaled planar and surround-gate MOSFETs(2005)91 cited
- → off-State Degradation in Drain-Extended NMOS Transistors: Interface Damage and Correlation to Dielectric Breakdown(2007)80 cited
- → Negative Bias Temperature Instability: Estimation and Design for Improved Reliability of Nanoscale Circuits(2007)76 cited
- → Efficient Transistor-Level Sizing Technique under Temporal Performance Degradation due to NBTI(2006)64 cited