Stephen G. Beebe
GlobalFoundries (United States)(US)
Publications by Year
Research Areas
Electrostatic Discharge in Electronics, Integrated Circuits and Semiconductor Failure Analysis, Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Electromagnetic Compatibility and Noise Suppression
Most-Cited Works
- → Field Effect Diode (FED): A novel device for ESD protection in deep sub-micron SOI technologies(2006)70 cited
- → Methodology for layout design and optimization of ESD protection transistors(2005)45 cited
- → Simulation of complete CMOS I/O circuit response to CDM stress(2002)39 cited
- → Design and optimization of the SOI field effect diode (FED) for ESD protection(2008)32 cited
- → ESD Design Strategies for High-Speed Digital and RF Circuits in Deeply Scaled Silicon Technologies(2010)31 cited
- → Design and Characterization of ESD Protection Devices for High-Speed I/O in Advanced SOI Technology(2010)30 cited
- → A computationally stable quasi-empirical compact model for the simulation of MOS breakdown in ESD-protection circuit design(2002)26 cited
- → An automatic biasing scheme for tracing arbitrarily shaped I-V curves(1994)23 cited
- → ESD design challenges and strategies in deeply-scaled integrated circuits(2009)20 cited
- → Reliability challenges of high performance PD SOI CMOS with ultra-thin gate dielectrics(2004)18 cited