Origin of High Photoconductive Gain in Fully Transparent Heterojunction Nanocrystalline Oxide Image Sensors and Interconnects
Advanced Materials2014Vol. 26(41), pp. 7102–7109
Citations Over TimeTop 10% of 2014 papers
Sanghun Jeon, Ihun Song, Sungsik Lee, Byungki Ryu, Seung‐Eon Ahn, Eunha Lee, Young Kim, Arokia Nathan, John Robertson, U‐In Chung
Abstract
A technique for invisible image capture using a photosensor array based on transparent conducting oxide semiconductor thin-film transistors and transparent interconnection technologies is presented. A transparent conducting layer is employed for the sensor electrodes as well as interconnection in the array, providing about 80% transmittance at visible-light wavelengths. The phototransistor is a Hf-In-Zn-O/In-Zn-O heterostructure yielding a high quantum-efficiency in the visible range.
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