GaN/AlGaN high electron mobility transistors withf τ of 110 GHz
Electronics Letters2000Vol. 36(4), pp. 358–359
Citations Over TimeTop 1% of 2000 papers
Abstract
The performance of 50 nm gate length GaN/AlGaN HEMTs is reported. The device layers were grown by MBE directly onto an SiC substrate. Devices exhibit a maximum drain current density of 1.2 A/mm, an extrinsic fτ of 110 GHz and an fmax of over 140 GHz. The fτ of 110 GHz is the highest reported to date for a GaN/AlGaN HEMT, a nearly 50% increase over the previous record.
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