P. Hashimoto
HRL Laboratories (United States)(US)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Radio Frequency Integrated Circuit Design, Ga2O3 and related materials, Semiconductor Quantum Structures and Devices, Semiconductor materials and devices
Most-Cited Works
- → Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications(2005)131 cited
- → GaN/AlGaN high electron mobility transistors withf τ of 110 GHz(2000)111 cited
- → 55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via $\hbox{n}+$ GaN Source Contact Ledge(2008)108 cited
- → High performance microwave power GaN/AlGaN MODFETsgrown by RF-assisted MBE(2000)99 cited
- → 92–96 GHz GaN power amplifiers(2012)95 cited
- → GaN HFET for W-band Power Applications(2006)92 cited
- → GaN double ifeterojunction field effect transistor for microwave and millimeterwave power applications(2005)83 cited
- → Gate‐recessed normally‐off GaN‐on‐ Si HEMT using a new O2‐BCl3 digital etching technique(2010)77 cited
- → GaN MMIC technology for microwave and millimeter-wave applications(2005)73 cited
- → GaN enhancement/depletion-mode FET logic for mixed signal applications(2005)73 cited