High performance microwave power GaN/AlGaN MODFETsgrown by RF-assisted MBE

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Abstract

High performance GaN/AlGaN MODFETs grown by MBE directly on SiC substrate have been successfully fabricated and characterised. The epitaxial layers of the device were grown by RF-assisted MBE. Excellent device uniformity, reproducibility and scalability were obtained. A maximum output density of 6.5 W/mm was obtained for a 0.1 mm device. On scaling to 1.0 mm gate-width, a total output power of 6.3 W with 38% PAE at 10 GHz was achieved. These device results demonstrate the excellent potential of GaN-based FETs as power cells for practical microwave applications.

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