P. Janke
HRL Laboratories (United States)(US)
Publications by Year
Research Areas
Radio Frequency Integrated Circuit Design, Semiconductor Quantum Structures and Devices, GaN-based semiconductor devices and materials, Microwave Engineering and Waveguides, Semiconductor Lasers and Optical Devices
Most-Cited Works
- → GaN/AlGaN high electron mobility transistors withf τ of 110 GHz(2000)111 cited
- → High performance microwave power GaN/AlGaN MODFETsgrown by RF-assisted MBE(2000)99 cited
- → GaN/AlGaN HEMTs operating at 20 GHz withcontinuous-wave power density > 6 W/mm(2001)68 cited
- → Microwave noise performance of AlGaN-GaN HEMTs with small DC power dissipation(2002)65 cited
- → AlGaN/GaN heterojunction field effect transistors grown by nitrogen plasma assisted molecular beam epitaxy(2001)52 cited
- → Robust low microwave noise GaN MODFETs with 0.60dB noise figure at 10 GHz(2000)47 cited
- → W-band InP HEMT MMICs using finite-ground coplanar waveguide (FGCPW) design(1999)32 cited
- → 164-GHz MMIC HEMT doubler(2001)31 cited
- → A high-gain monolithic D-band InP HEMT amplifier(1999)24 cited
- → A high gain, low power MMIC LNA for Ka-band using InP HEMTs(2003)19 cited