Band gap of theGe(111)c(2×8)surface by scanning tunneling spectroscopy

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Abstract

The surface band gap of the $\mathrm{Ge}(111)c(2\ifmmode\times\else\texttimes\fi{}8)$ surface at low temperature is determined on the basis of scanning tunneling spectroscopy. Electrostatic potential computations permit evaluation of tip-induced band bending, from which a correction to the energy scale of the observed spectra is made. Parameter values in the computations are constrained by comparison of the observed spectrum with known spectral features, including high-lying conduction band features derived from first-principles computations. The surface band gap, lying between the bulk valence band maximum and the minimum of an adatom-induced surface band, is found to have a width of $0.49\ifmmode\pm\else\textpm\fi{}0.03\phantom{\rule{0.3em}{0ex}}\mathrm{eV}$.

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