Reliability of Ag Sintering for Power Semiconductor Die Attach in High-Temperature Applications

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Abstract

Low-temperature Ag sintering provides a lead-free die attachment method that is compatible with high-temperature (300 °C) power electronics applications. The reliability of sintered Ag die attach for Si and SiC die has been studied on both thick film substrates for lower current power applications and direct bond copper (DBC) substrates for higher current power applications. Pressureless and low-pressure sintering were evaluated. Sintering with low pressure yielded lower porosity (15-17%) versus pressureless sintering (~30%). Reliability was evaluated with thermal aging (300 °C) and thermal cycling (-55 °C to + 300 °C) tests. Reliable Ag sintered die attach was achieved with assemblies having Ag-bearing surface finishes on both the die and the substrate. In contrast, the shear strength after 300 °C aging was greatly reduced when Au metallization was used either on the die or on substrate surface. In some cases, low-pressure sintering delayed the failure of the sintered Ag die attach to Au surfaces when aged at 300 °C compared to the pressureless sintering. The reliability with Pd-containing substrate metallizations was intermediate between Ag and Au metallizations. The thermal cycle reliability on DBC substrates was limited by failure at the Cu-to-alumina interface over the wide temperature range, while on the thick film substrates high adhesion was maintained after 1000 thermal cycles.

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