<title>Electron Beam Resist And Photoresist Behavior Of Polychrome Positive Resist</title>

Abstract

A commercially available positive photoresist, Polychrome 129 SF, has been evaluated as both a positive electron beam resist and photoresist. The photoresist sensitivity, measured uniquely for a given developer based upon image dimensional control, is determined to be less than that of AZ 1350, under as nearly equivalent conditions as possible. The E-beam resist sensitivity is lower than that of PMMA reference, but the resist possesses good resolution. Near vertical edge wall profiles are obtained for 1-micrometer lines, but no undercutting is ever achieved regardless of electron charge density magnitude. The resist is capable of submicron line and space E-beam resolution, and 0.50-0.75 micrometer wide isolated line patterns can be routinely achieved.

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