Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR
Semiconductors2013Vol. 47(7), pp. 993–996
Citations Over TimeTop 21% of 2013 papers
N. A. Maleev, A. G. Kuzmenkov, M. M. Kulagina, Yu. M. Zadiranov, А. П. Васильев, S. A. Blokhin, A. S. Shulenkov, S. I. Troshkov, A. G. Gladyshev, A. M. Nadtochiy, Mikhail Pavlov, M. A. Bobrov, D. E. Nazaruk, V. M. Ustinov
Abstract
Single-spatial-mode semiconductor vertical-cavity surface-emitting lasers (VCSELs) with a non-planar upper (output) dielectric distributed Bragg reflector (DBR) for the 850 nm spectral region are fabricated. The suggested design provides stable single-mode generation in the entire range of working currents, limited by overheating of the active region. Devices with intracavity contacts and a comparatively large current-aperture diameter (5–6 μm) exhibit single-mode lasing at a wavelength of 840–845 nm in the continuous-wave mode at room temperature with threshold currents of 1.2–1.3 mA, a differential efficiency of 0.5–0.55 mW mA−1, and anoutput power of up to 2 mW.
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