Study of resolution limits due to intrinsic bias in chemically amplified photoresists
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena1999Vol. 17(6), pp. 3335–3338
Citations Over TimeTop 10% of 1999 papers
Sergei V. Postnikov, M. D. Stewart, Hoang V. Tran, Mark A. Nierode, David R. Medeiros, T. Cao, Jeffrey D. Byers, Stephen E. Webber, C. Grant Wilson
Abstract
This article presents experimental results that suggest that classical Fickian diffusion cannot account for any significant fraction of the critical dimension bias observed in chemically amplified photoresists. A transport mechanism based on reaction front propagation is proposed as a possible explanation for the experimental observations.
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