Mask contribution to intra-field wafer overlay

Citations Over TimeTop 15% of 2014 papers

Abstract

Shrinking wafer overlay budgets raise the importance of careful characterization and control of the contributing components, a trend accelerated by multi-patterning immersion lithography [1]. Traditionally, the mask contribution to wafer overlay has been estimated from measurement of a relatively small number of standard targets. There are a number of studies on test masks and standard targets of the impact of mask registration on wafer overlay [2],[3]. In this paper, we show the value of a more comprehensive characterization of mask registration on a product mask, across a wide range of spatial frequencies and patterns. The mask measurements will be used to obtain an accurate model to predict mask contribution to wafer overlay and correct for it.

Related Papers

• → Top coat less resist process development for contact layer of 40nm node logic devices(2010)5 cited
• → Basic studies of overlay performance on immersion lithography tool(2006)3 cited
• → Study on the resist materials leaching from resist film during immersion exposure for 193nm using QCM method(2005)2 cited
• → Verification of optical proximity effect in immersion lithography(2006)1 cited
• → Resist baking conversion from wafers to mask-substrates(2005)