Alternative materials for high numerical aperture extreme ultraviolet lithography mask stacks
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE2015Vol. 9422, pp. 94220I–94220I
Citations Over TimeTop 10% of 2015 papers
Obert R. Wood, Sudharshanan Raghunathan, Pawitter J. S. Mangat, Vicky Philipsen, Vu Luong, Patrick A. Kearney, Erik Verduijn, Aditya Kumar, Suraj Patil, Christian Laubis, Victor Soltwisch, Frank Scholze
Abstract
In this paper we compare the imaging performance of several options currently under consideration for use in 0.33 and higher numerical aperture (NA) extreme ultraviolet (EUV) mask stacks, Mo/Si ML reflective coatings with 40 bilayers, Ru/Si multilayer (ML) reflective coatings with 20 bilayers, and a new thinner Ni-based absorber layer on each of these mask stacks. The use of a Ru/Si ML coating with its shallower effective reflectance plane and a 2x thinner Ni-based absorber is expected to significantly reduce both shadow bias requirements and mask telecentricity errors. The conclusions of the paper are supported with the results of both experimental measurements and rigorous simulations.
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